Gap fill materials and bottom anti-reflective coatings comprising hyperbranched polymers

ABSTRACT

New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a dendritic polymer dispersed or dissolved in a solvent system, and preferably a light attenuating compound, a crosslinking agent, and a catalyst. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

RELATED APPLICATION

This application is a divisional application of U.S. patent applicationSer. No. 11/032,930, filed Jan. 11, 2005, pending and incorporated byreference herein.

FEDERALLY SPONSORED RESEARCH/DEVELOPMENT PROGRAM

This invention was made with Government support under contract MDA PhaseIII Contract # DASG60-01-C-0047. The Goverment has certain rights in theinvention.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention is concerned with new anti-reflective compositionsand via fill compositions for use in the manufacture of microelectronicdevices. These compositions include a dendritic polymer dispersed ordissolved in a solvent system.

2. Description of the Prior Art

1. Anti-reflective Coatings

Integrated circuit manufacturers are consistently seeking to maximizesubstrate wafer sizes and minimize device feature dimensions in order toimprove yield, reduce unit case, and increase on-chip computing power.Device feature sizes on silicon or other chips are now submicron in sizewith the advent of advanced deep ultraviolet (DUV) microlithographicprocesses.

However, a frequent problem encountered by photoresists during themanufacturing of semiconductor devices is that activating radiation isreflected back into the photoresist by the substrate on which it issupported. Such reflectivity tends to cause blurred patterns whichdegrade the resolution of the photoresist. Degradation of the image inthe processed photoresist is particularly problematic when the substrateis non-planar and/or highly reflective. One approach to address thisproblem is the use of an anti-reflective coating applied to thesubstrate beneath the photoresist layer.

In the semiconductor industry, two broad types of bottom anti-reflectivecoatings have been used: organic and inorganic. Inorganic bottomanti-reflective coatings like SiON and TiN are deposited byplasma-enhanced, chemical vapor deposition techniques (PEVCD). Theseinorganic films are conformal and difficult to remove after thephotolithography step. On the other hand, organic bottom anti-reflectivecoatings are planarizing, are deposited by a cost-effective spin-coatingprocess, and can be easily removed by dry etching or stripping using wetchemicals.

Organic bottom anti-reflective coatings are formulated based on linearchain polymers which have crosslinkable sites. Light attenuatingchromophores are grafted to these linear polymers to absorb light at theexposure wavelengths. For example, linear chain acrylate polymers havebeen used as the basic structure to formulate bottom anti-reflectivecoatings. Aliphatic polyester polymers have also been used. One majordrawback of linear chain polymers, however, is that they undergo chainentanglements, leading to poor flow properties, particularly when usedas fill compositions as discussed below.

2. Fill Compositions

The damascene process, or the process of forming inlaid metal patterningin preformed grooves, is generally a preferred method of fabricatinginterconnections for integrated circuits. In its simplest form, the dualdamascene process starts with an insulating layer which is first formedon a substrate and then planarized. Horizontal trenches and verticalholes (i.e., the contact and via holes) are then etched into theinsulating layer corresponding to the required metal line pattern andhole locations that will descend down through the insulating layer tothe device regions (if through the first insulating layer, i.e., acontact hole) or to the next metal layer down (if through an upperinsulating layer in the substrate structure, i.e., a via hole). Metal isnext deposited over the substrate, thereby filling the trenches and theholes and forming the metal lines and interconnect holes simultaneously,As a final step, the resulting surface is planarized (e.g., by the knownchemical-mechanical polish (CMP) technique) and readied to acceptanother damascene structure.

During the dual damascene process, the contact and via holes aretypically etched to completion prior to the trench etching. Thus, thestep of trench etching exposes the bottom and sidewalls (which areformed of the insulating or dielectric layer) of the contact or viaholes to over-etch which can deteriorate contact with the base layer. Anorganic material is typically used to partially or completely fill thevia or contact holes and to protect the bottom and sidewalls fromfurther etch attack. These organic fill materials can also serve as abottom anti-reflective coating (as discussed above) to reduce oreliminate pattern degradation and linewidth variation in the patterningof the trench layer, provided the fill material covers the surface ofthe dielectric layer.

Fill materials which have high optical density at the typical exposurewavelengths have been used for the past several years. However, mostprior art materials have limited fill properties. For example, when theprior art compositions are applied to the via or contact holes formedwithin the substrate, the films formed by the compositions tend to bequite thin on the substrate surface immediately adjacent the holes, thusleading to undesirable light reflection during subsequent exposuresteps. Also, the flow properties of the composition tend to be lackingin that the composition does not completely flow into via and contactholes, resulting in inadequate protection of those holes.

There is a need in the art for contact or via hole fill materials whichprovide complete coverage at the top of via and contact holes.Furthermore, this material should properly flow into the via and contactholes to protect the base during etching and prevent degradation of thebarrier layer and damage to the underlying metal conductors.

SUMMARY OF THE INVENTION

The present invention is broadly concerned with new anti-reflective orfill compositions and methods of using those compositions to protectsubstrates, and particularly contact and via holes formed therein,during circuit manufacturing.

In more detail, the compositions comprise a dendritic polymer dispersedor dissolved in a solvent system. Preferred dendritic polymers includeboth dendrimers and hyperbranched polymers. It is particularly preferredthat the dendritic polymer have a viscosity of less than about 150×10³cP, and more preferably from about 7×10³ to about 110×10³ cP. Theaverage molecular weight (as determined by Gel PermeationChromatograplly/Size Exclusion Chromatography) of the dendrtic polymeris preferably less than about 15,000 g/mole, more preferably from about800-5,200 g/mole, and more preferably from about 1,500-5,200 g/mole.

In one embodiment, the dendritic polymer should have a hydroxyl number(as determined by ASTM E-222) of at least about 100 mg KOH/g ofdendritic polymer, preferably from about 300-600 mg KOH/g of dendriticpolymer, and more preferably from about 500-600 ing KOH/g of dendriticpolymer.

Particularly preferred dendritic polymers include those selected fromthe group consisting of dendritic polyesters, dendritic polyols,dendritic polyethers, dendritic polyamines, dendritic carboxylic acids,and mixtures thereof.

The inventive compositions generally have an overall solids content offrom about 0.5-10% and can be prepared by simply dissolving ordispersing the dendritic polymer in a suitable solvent system. Thesolvent system should have a boiling point of from about 100-200° C.,and preferably from about 120-170° C. The amount of dendritic polymerdissolved in the solvent system is from about 0.2-10% by weightdendritic polymer, preferably from about 2-7% by weight dendriticpolymer, and more preferably from about 3-6% by weight dendriticpolymer, based upon the total weight of the composition taken as 100% byweight.

The solvent system should be utilized at a level of from about 90-99% byweight, preferably from about 93-98% by weight, and more preferably fromabout 94-97% by weight, based upon the total weight of the compositiontaken as 100% by weight. Preferred solvent systems include a solventselected from the group consisting of propylene glycol monomethyl ether(PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyllactate, propylene glycol n-propyl ether (PnP), cyclohexanone,tetrahydrofuran (THF), dimethyl formamide (DMF), γ-butyrolactone,2-heptanone, N-methylpyrollidinone, and mixtures thereof.

Preferably, the inventive compositions further comprise a compoundselected from the group consisting of crosslinking agents, catalysts,light attenuating compounds, and mixtures thereof. Preferredcrosslinking agents include those selected from the group consisting ofmelamines and glycourils (e.g., POWDERLINK® 1174, Cymel® products),multifunctional epoxy resins (e.g., MY720, CY179MA, DENACOL),anhydrides, and mixtures thereof. The crosslinking agent should bepresent in the composition at a level of from about 0.2-5% by weight,and preferably from about 0.5-3% by weight, based upon the total weightof the composition taken as 100% by weight. Thus, the compositions ofthe invention should crosslink at a temperature of from about 100-250°C., and more preferably from about 150-205° C.

Preferred catalysts include sulfonic acids (e.g., p-toluenesulfonicacid, styrene sulfonic acid), thermal acid generators (e.g., pyridiniumtosylate), carboxylic acids (e.g., trichloroacetic acid, benzenetetracarboxylic acid), sulfonates (e.g., pyridiniumtrifluoromethanesulfonate, pyridinium 3-nitrobenzenesulfonate), andmixtures thereof. The catalyst should be present in the composition at alevel of from about 0.2-1% by weight, and preferably from about 0.3-0.6%by weight, based upon the total weight of the composition taken as 100%by weight.

Preferred light attenuating compounds include those selected from thegroup consisting of anthracenes (e.g., 9-anthracene carboxylic acid,9-hydroxy methyl anthracene), naphthalenes (e.g., 3-hydroxy-2-naphthoicacid, 1,4-dihydroxy-2-naphthoic acid), phenyls (e.g. 4-hydroxybenzoicacid, 3,4-hydroxy benzoic acid), and mixtures thereof. The lightattenuating compound should be present in the composition at a level offrom about 0.5-4% by weight, and preferably from about 1-2% by weight,based upon the total weight of the composition taken as 100% by weight.

The method of applying the anti-reflective or fill compositions to asubstrate having a contact or via hole simply comprises applying aquantity of a composition hereof to the substrate surfaces forming thehole by any conventional application method (including spincoating).Advantageously the inventive compositions will have low viscosities(e.g., less than about 10 cP, more preferably from about 2-7 cP, andever more preferably from about 3-5 cP) at this stage, thus providingsuperior coverage.

After the desired coverage is achieved, the resulting fill compositionlayer should be heated to at least about the crosslinking temperature(e.g., from about 100-250° C.) of the composition so as to cure thelayer. Because of the superior coverage and flow properties of thepresent inventive composition, the thickness of the cured fill materiallayer on the surface of the substrate adjacent the edge of the contactor via hole will be at least about 50%, preferably at least about 55%,and more preferably at least about 65% of the thickness of the film onthe substrate surface a distance away from the edge of the contact orvia hole approximately equal to the diameter of the hole, even with holediameters as small as about 0.1-0.2 μm in diameter and/or about 0.5-0.8μm in depth.

Cured compositions according to the invention exhibit particularly goodproperties at wavelengths of less than about 400 nm. For example, theyhave high etch rates. The cured compositions have an etch selectivity toresist (i.e., the anti-reflective coating layer etch rate divided by thephotoresist etch rate) of at least about 1.1, and preferably at leastabout 1.2, when CF₄ is used as the etchant. Additionally, at 193 nm and248 nm exposure wavelengths, the cured compositions can form layershaving a k value (i.e., the imaginary component of the complex index ofrefraction) of at least about 0.3, and preferably at least about 0.4,and an n value (i.e., the real component of the complex index ofrefraction) of at least about 1.0, and preferably at least about 1.5 atfilm thicknesses of from about 150-190 μm.

Furthermore, the cured coatings according to the invention will besubstantially insoluble in typical photoresist solvents. Thus, whensubjected to a stripping test, the inventive anti-reflective coatinglayers will have a percent stripping of less than about 5%, preferablyless than about 1%, and even more preferably about 0%. The strippingtest involves first determining the thickness (by taking the average ofmeasurements at five different locations) of a cured film. This is theaverage initial film thickness. Next, a solvent (e.g., ethyl lactate) ispuddled onto the cured film for about 10 seconds, followed by spindrying at about 2,000-3,500 rpm for about 20-30 seconds to remove thesolvent. The film thickness is measured again at five different pointson the wafer using ellipsometry, and the average of these measurementsis determined. This is the average final film thickness.

The amount of stripping is the difference between the initial and finalaverage film thicknesses. The percent stripping is:

${\%\mspace{11mu}{stripping}} = {\left( \frac{{amount}\mspace{14mu}{of}\mspace{14mu}{stripping}}{{initial}\mspace{14mu}{average}\mspace{14mu}{film}\mspace{14mu}{thickness}} \right) \times 100.}$

A photoresist can be applied to the cured material, followed by drying(soft bake), exposing, post-exposure baking, and developing thephotoresist. Following the methods of the invention will yield precursorstructures for dual damascene and other microlithographic processeswhich have the foregoing desirable properties.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic drawing showing various types of knownmacromolecular architecture;

FIG. 2 is a schematic drawing showing a typical hyperbranched polymer;

FIG. 3. a graph showing the film thickness versus the etching time of ahyperbranched polymer and a linear polymer;

FIG. 4 shows three scanning electron microscope (SEM) photographsdepicting respective cross-sectional views of substrates havingrespective via holes filled with a composition according to theinvention; and

FIG. 5 is a schematic, cross-sectional view of a substrate having viaholes formed therein where the holes are filled with a fill composition.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Polymeric architectures can be divided into different types. One type ofpolymeric architecture is the dendritic macromolecules. Dendriticmolecules can be divided into two subtypes—dendrimers and hyperbranchedpolymers. Dendrimers are symmetrical and globular structures (i.e.,they're monodisperse, tree-like structures) which have well-definedbranches radiating from a central core. The structure becomes morebranched and crowded at the outer periphery thereof.

Hyperbranched polymers also have a fractal pattern of chemical bonds,but the branches of hyperbranched polymers don't radiate from a centralcore (i.e., they're polydisperse). Furthermore, hyperbranched polymershave a degree of branching that is less than <1. FIG. 1 shows examplesof both of these types of structures as well as linear and cross-linkedpolymers for comparison purposes.

Dendritic polymers are different from linear polymers in that they don'thave entangled chains, and they have numerous side chains which can befunctionalized. The advantages of dendritic polymers include their lowhydrodynamic volumes and the compactness of the high generations ofthese macromolecules.

EXAMPLES

The following examples set forth preferred methods in accordance withthe invention. It is to be understood, however, that these examples areprovided by way of illustration and nothing therein should be taken as alimitation upon the overall scope of the invention.

Example 1 Formulation of Gap Fill Material for Exposure Wavelengths ofLess Than 400 nm

In this example, a gap fill material was prepared by mixing 5.65% byweight of BOLTORN H40 (a hyperbranched polymer having a molecular weightof 5100 g/mole and available from Perstorp Specialty Chemicals AB,Sweden), 0.05% by weight of CYMEL 303LF (a crosslinking agent availablefrom Cytec Industries), 1.31% by weight of POWDERLINK 1174 (acrosslinking agent available from Cytec Industries), 0.018% by weight ofp-toluenesulfonic acid (pTSA), 0.32% by weight of Bisphenol-A, 91.652%by weight of propylene glycol monomethyl ether (PGME), and 1.0% byweight of propylene glycol monomethyl ether acetate (PGMEA). Thesolution was coated onto a silicon wafer at 1500 rpm for 60 seconds andthen baked at 205° C. for 60 seconds. The film thickness was 190 nmmeasured on an ellipsometer. The refractive index, n, was 1.60 at awavelength of 248 nm and 1.71 at a wavelength of 193 nm. The extinctioncoefficient, k, was 0.00 at a wavelength of 248 nm and 0.05 at awavelength of 193 nm.

Example 2 Formulation of Gap Fill Material for Exposure Wavelengths ofLess Than 400 nm

In this example, a gap fill material was prepared by mixing 5.65% byweight of BOLTORN H20 (a hyperbranched polymer having a molecular weightof 5100 g/mole and available from Perstorp Specialty Chemicals AB,Sweden), 0.05% by weight of CYMEL 303LF, 1.31% by weight of POWDERLINK1174, 0.018% by weight of pTSA, 0.32% by weight of Bisphenol-A, 91.652%by weight of PGME, and 1.0% by weight of PGMEA. The solution was coatedonto a silicon wafer at 1500 rpm for 60 seconds and then baked at 205°C. for 60 seconds. The film thickness was 183 nm measured on anellipsometer. The refractive index, n, was 1.60 at a wavelength of 248nm and 1.70 at a wavelength of 193 nm. The extinction coefficient, k,was 0.00 at a wavelength of 248 nm and 0.05 at a wavelength of 193 nm.

Example 3 Formulation of Gap Fill Material for Exposure Wavelengths ofLess Than 400 nm

In this example, a gap fill material was prepared by mixing 5.65% byweight of BOLTORN H30 (a hyperbranched polymer having a molecular weightof 5100 g/mole and available from Perstorp Specialty Chemicals AB,Sweden), 0.05% by weight of CYMEL 303LF, 1.31% by weight of POWDERLINK1174, 0.018% by weight of pTSA, 0.32% by weight of Bisphenol-A, 91.652%by weight of PGME, and 1.0% by weight of PGMEA. The solution was coatedonto a silicon wafer at 1500 rpm for 60 seconds and then baked at 205°C. for 60 seconds. The film thickness was 186 nm measured on anellipsometer. The refractive index, n, was 1.60 at a wavelength of 248nm and 1.70 at a wavelength of 193 nm. The extinction coefficient, k,was 0.01 at a wavelength of 248 nm and 0.05 at a wavelength of 193 nm.

Example 4 Bottom Anti-Reflective Coating Formulation for 248 nm Exposure

In this example, a bottom anti-reflective coating was prepared by mixing2.8% by weight of BOLTORN H40, 1.4% by weight of 9-anthracene carboxylicacid (9-ACA, a cliromophore), 1.7% by weight of CYMEL 303LF, 0.2% byweight of pyridinium p-toluenesulfonate (PPTS), 46.8% by weight of PGME,and 47.1% by weight ethyl lactate (EL). The solution was coated onto asilicon wafer at 1500 rpm for 60 seconds and then baked at 160° C. for60 seconds. The film thickness was 157 nm measured on an ellipsometer.The refractive index, n, was 1.60 at a wavelength of 248 nm. Theextinction coefficient, k, was 0.40 at a wavelength of 248 μm.

Example 5 Bottom Anti-Reflective Coating Formulation for 248 nm Exposure

In this example, a bottom anti-reflective coating was prepared by mixing2.8% by weight of BOLTORN H40, 1.4% by weight of 3-hydroxy-2-naphthoicacid (a chromophore), 1.7% by weight of CYMEL 303LF, 0.2% by weight ofPPTS, 46.8% by weight of PGME, and 47.1% by weight EL. The solution wascoated onto a silicon wafer at 1500 rpm for 60 seconds, and then bakedat 160° C. for 60 seconds. The film thickness was 153 nm measured on anellipsometer. The refractive index, n, was 1.79 at a wavelength of 248nm. The extinction coefficient, k, is 0.27 at a wavelength of 248 nm.

Example 6 Bottom Anti-Reflective Coating Formulation for 193 nm Exposure

In this example, a bottom anti-reflective coating was prepared by mixing2.6% by weight of BOLTORN H40, 1.8% by weight of 4-hydroxybenzoic acid(a cliromophore), 1.6% by weight of CYMEL 303LF, 0.3% by weight of PPTS,49.6% by weight of PGME, and 44.0% by weight EL. The solution was coatedonto a silicon wafer at 1500 rpm for 60 seconds, and then baked at 160°C. for 60 seconds. The film thickness was 142 nm measured on anellipsometer. The refractive index, n, was 1.57 at a wavelength of 193nm. The extinction coefficient, k, was 0.17 at a wavelength of 193 nm.

Example 7 Bottom Anti-Reflective Coating Formulation for 193 nm Exposure

In this example, a bottom anti-reflective coating was prepared by mixing2.6% by weight of BOLTORN H40, 1.8% by weight of 3,4-dihydroxybenzoicacid (a chromophore), 1.6% by weight of CYMEL 303LF, 0.3% by weight ofPPTS, 49.6% by weight of PGME, and 44.0% by weight EL. The solution wascoated onto a silicon wafer at 1500 rpm for 60 seconds, and then bakedat 160° C. for 60 seconds. The film thickness was 156 nm measured on anellipsometer. The refractive index, n, was 1.53 at a wavelength of 193nm. The extinction coefficient, k, was 0.16 at a wavelength of 193 nm.

Example 8 Bottom Anti-Reflective Coating Formulation for 193 nm Exposure

h this example, a bottom anti-reflective coating was prepared by mixing1.8% by weight of BOLTORN H40, 0.9% by weight of Phenol Novolac PSM 4324(a chromophore, available from Gun Ei Chemical, Industry CO. LTD), 0.5%by weight of CYMEL 303LF, 0.04% by weight of PPTS, 48.58% by weight ofPGME, aid 48.17% by weight EL. The solution was coated onto a siliconwafer at 1500 rpm for 60 seconds and then baked at 205° C. for 60 sec.The film thickness was 84 nm measured on an ellipsometer. The refractiveindex, n, was 1.54 at a wavelength of 193 nm. The extinctioncoefficient, k, was 0.29 at a wavelength of 193 nm.

Example 9 Performance Testing Methods

1. Ethyl Lactate Stripping Test

An ethyl lactate stripping test was carried out to determine the extentof the crosslinking reaction after baking. In this test, the particularformulation was spin-coated onto a 4-inch silicon wafer and then bakedat 150° C. to 205° C. for 60 seconds. The initial film thickness wasthen measured using ellipsometry. After recording the thickness, thewafer was sprayed with ethyl lactate. The resulting puddle was left tostand for 10 seconds, and the wafer was spun at 2000-3500 rpm for 20-30seconds. The wafer was then re-measured to determine the final filmthickness. This final film thickness was subtracted from the initialfilm thickness to yield the amount of film stripping. Each of theformulations described in Examples 1-4 exhibited no stripping, thusindicating a very effective crosslinking reaction.

2. Etch Rate

The etch rate is an indicator of how fast the film will etch in aplasma. The etchant gas used was CF₄, and the flow rate was 40 sccm. Thepower applied was 100W. The formulation of Example 1 was spin-coatedonto a 4-inch silicon wafer and baked at 205° C. The initial filmthickness was measured using ellipsometry. The wafer was placed in anetch chamber (a Reactive Ion Etcher manufactured by TRION Corp.) andsubjected to CF₄ etching for a predetermined time. The film thicknesswas measured after the etch process. A graph of film thickness as afunction of etch time was plotted, and the etch rate was determined fromthe slope of the curve. FIG. 3 shows such a plot for BOLTRON H40 and alinear polymer NSP-05 (a copolymer of glycidyl methacrylate andhydroxypropryl methacrylate, available from Nissan Chemical Industries,Japan). FIG. 4 shows an SEM photograph of a cured film from theformulation described in Example 1. The film covered the respective topsof vias of different densities: dense, semi-dense, and isolated. Acrossan 8-inch silicon wafer, the iso-dense bias was less than 50 nm.

Thus, compositions according to the invention can be utilized withsubstrates having a wide variation of iso and/or dense patterns. An Isopattern is a pattern in which the distance between the center of a firsthole and the center of an adjacent hole is at least about three timesthe diameter of the first hole. A Dense pattern is a pattern in whichthe distance between the center of a first hole and the center of anadjacent hole is about equal to or less than the diameter of the firsthole.

The degree of leveling of the cured inventive composition in contact orvia holes should be at least about 90%, preferably at least about 92%,and more preferably at least about 95%. The degree of leveling of theanti-reflective coating is determined by observing (under a scanningelectron microscope) the cross-sectional surface of a coated siliconwafer substrate. This can be better understood by referring to FIG. 5.As used here, the degree of leveling is determined as follows (where100% means that complete leveling was achieved):

${{{Degree}\mspace{14mu}{of}\mspace{14mu}{leveling}} = {\left( \frac{1 - \left( {{height}\mspace{14mu}{of}\mspace{14mu}{meniscus}\mspace{11mu}{``M"}} \right)}{{height}\mspace{14mu}{``H"}\mspace{14mu}{of}\mspace{14mu}{the}\mspace{14mu}{hole}} \right) \times 100}},$wherein “M” and “H” are measurements taken from the cured material asshown in FIG. 5 where 10 represents the cured material in the hole 12.Specifically, “H” represents the height of the particular hole, and “M”represents the meniscus of the composition in the hole.

The inventive compositions can achieve such high degrees of levelingbecause they are highly and smoothly flowable, thus allowing a largenumber of holes to be filled smoothly, resulting in a substantiallyconstant film thickness.

1. The combination of a substrate having a surface and a curedprotective layer on said surface, said cured protective layer beingformed from an anti-reflective coating or fill composition comprising adendritic polymer, a light attenuating compound, and a crosslinkingagent dispersed or dissolved in a solvent system, wherein: said polymeris a dendritic polymer selected from the group consisting of dendriticpolyesters, dendritic polyols, dendritic polyethers, dendriticpolyamines, and mixtures thereof; said crosslinking agent is selectedfrom the group consisting of melamines, glycourils, and mixturesthereof; and said light attenuating compound is selected from the groupconsisting of 9-anthracene carboxylic acid, 9-hydroxy methyl anthracene,3-hydroxy-2-naphthoic acid, 1,4-dihydroxy-2-naphthoic acid,4-hydroxybenzoic acid, 3,4-hydroxy benzoic acid, and mixtures thereof.2. The combination of claim 1, wherein said substrate is amicroelectronic substrate.
 3. The combination of claim 1, wherein saidsubstrate comprises a silicon wafer.
 4. The combination of claim 1,wherein said substrate has a hole formed therein, said hole beingdefined by a bottom wall and sidewalls, and said cured protective layerbeing in contact with at least a portion of the surfaces of said bottomwall and sidewalls.
 5. The combination of claim 4, wherein the degree ofleveling of said cured protective layer in said hole is at least about85%.
 6. The combination of claim 1, wherein said dendritic polymer is ahyperbranched polymer.
 7. The combination of claim 1, wherein saidcomposition has a viscosity of less than 10 cP.
 8. The combination ofclaim 1, wherein said composition comprises from about 0.2-10% by weightdendritic polymer, based upon the total weight of the composition takenas 100% by weight.
 9. The combination of claim 1, wherein saidcomposition further comprises a catalyst.
 10. The combination of claim9, wherein said compound is a catalyst selected from the groupconsisting of sulfonic acids, carboxylic acids, and mixtures thereof.11. The combination of claim 1, wherein said dendritic polymer has anaverage molecular weight of less than 15,000 g/mole.
 12. The combinationof claim 1, wherein said dendritic polymer has a viscosity of less than150×10³ cP.
 13. The combination of claim 1, wherein said dendriticpolymer has a hydroxyl number of at least 100 mg KOH/g of dendriticpolymer.
 14. The combination of claim 1, wherein said compositioncomprises from about 90-99% by weight of said solvent system, based uponthe total weight of the composition taken as 100% by weight.
 15. Thecomposition of claim 1, wherein said solvent system has a boiling pointof from about 100-200° C.